蒋春生博士简介

姓名:蒋春生

性别:男

职称:副研究员

任职情况:专任教师、广西师范大学B类漓江学者

社会兼职:SCI期刊Frontiers in Neuroscience客座编辑、国际期刊American Journal of Nano Research and Applications(NANO)编委、行业著名期刊IEEE Transactions on Electron Devices,International Journal of Electronics,Semiconductor Science and Technology等审稿人

最后学历:博士研究生


一、学习经历:(大学起)

2009/09-2013/07 西安电子科技大学 微电子学院教改班 理学学士

2013/09-2018/07 清华大学 微电子与纳电子学系 工学博士 导师:许军

2016/09-2017/09  美国普渡大学  电子与计算机工程学院 博士联合培养

工作经历:

2018/07-2020/11 中国工程物理研究院电子工程研究所 助理研究员

2020/11-2021/07 中国工程物理研究院电子工程研究所 副研究员

2021/07-至今 广西师范大学 电子工程学院 专任教师

二、研究方向:

新型半导体低功耗器件(FinFET、Tunneling FET、Junctionless Transistor、Negative capacitance Transistor等)实验制备、机理建模与仿真;

双极型和CMOS半导体器件和芯片辐射可靠性实验表征、失效机理建模与仿真、抗辐射加固设计等;

新型神经态器件(RRAM、Ag/HfO2原子阈值开关等)制备、设计和机理建模与仿真。

三、主讲课程:

暂无

四、主持/参加科研、教改项目(标注是在研或已完成):

1.中国工程物理研究院院长基金培育项目-“无结型晶体管辐射效应研究”,10万元(主持,已完成,结题:优秀);

2. 国家自然科学青年基金项目-“纳米尺度2D NC-FET寄生效应影响机理及其解析模型研究”,23万元(主持,在研);

3. 国家重点研发计划项目-“应变诱导大面积纳米结构的可控加工方法及应用基础研究”,712万元(参加,已完成);

4. 国家科技重大专项项目-“新材料与工艺研究”,846万元(参加,已完成);

5. 国家科技重大专项项目-“高迁移率沟道工程”,3763万元(参加,已完成);

五、发表的主要论文或授权的专利:

目前蒋春生博士在国际顶级期刊和国际顶级会议:Nature Nanotechnology, Nature Communications, Nano Letters, Advanced Materials, IEEE EDL, IEEE JEDS, IEEE TED, IEEE TNANO, IEDM(行业顶会), Advanced Electronic Materials等共发表SCI和EI论文37篇,其中以第一作者发表SCI论文10篇,一作EI论文7篇,出版中英文专著各一部。以第二作者申请专利两项(已授权)。代表作如下:

[1] Hua Q.*, Gao G.*, Jiang C.*(*共同一作), et al. Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics. Nature communications, 2020, 11(1): 1-10.

[2] Chunsheng Jiang, Zhong Le, and Xie Lei. Impact of the interface trap charges on electcal characteristics of back-gated 2D negative-capacitance(NC) FET. IEEE Transactions on Nanotechnology, vol.18, no. 1, 2019.

[3] C. Jiang, R. Liang, L. Zhong, L. Xie, W. Cheng, and J. Xu. Effects of parasitic capacitance on both static and dynamic electrical characteristics of back-gated two-dimensional semiconductor negative-capacitance field-effect transistors. Applied Physics Express, 2018, 11(12): 124101.

[4] Chunsheng Jiang, Mengwei Si, Renrong Liang, Jun Xu, Peide Ye, and Muhammad Ashraful Alam. A Closed Form Analytical Model of Back-Gated 2D Semiconductor Negative Capacitance Field Effect Transistors. IEEE Journal of the Electron Devices Society, 2018, 6(1): 189-193.

[5] Chunsheng Jiang, Renrong Liang, Jun Xu, and Muhammad Ashraful Alam. A Compact Quasi-Static Terminal Charge and Drain Current Model for Double-Gate Junctionless Transistors and Its Circuit Validation. IEEE Transactions on Electron Devices, vol. 64, 2017.

[6] Chunsheng Jiang, Renrong Liang, and Jun Xu. Investigation of Negative Capacitance Gate-all-Around Tunnel FETs Combining Numerical Simulation and Analytical Modeling. IEEE Transactions on Nanotechnology, vol. 16, no. 1, 2017.

[7] Chunsheng Jiang, Renrong Liang, Jing Wang and Jun Xu. A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification. Journal of Physics D: Applied Physics,vol. 48, no. 36.

[8] Chunsheng Jiang, Renrong Liang, Jing Wang and Jun Xu. A two-dimensional analytical model for short channel junctionless double-gate MOSFETs. AIP advances, vol. 5, no. 057122, 2015.

[9] Chunsheng Jiang, Renrong Liang, Jing Wang and Jun Xu. Analytical drain current model for long-channel gate-all-around negative capacitance transistors with a metal-ferroelectric-insulator-semiconductor structure. Japanese Journal of Applied Physics (JJAP), vol. 55, no. 024201, 2016.

[10] Chunsheng Jiang, Renrong Liang, Jing Wang and Jun Xu. Simulation-based study of negative capacitance double-gate junctionless transistors with ferroelectric gate dielectric. Solid-State Electronics, vol. 26, 2016.

[11] Woojin Ahn*, Chunsheng Jiang*(*共同一作), Jun Xu, and Muhammad Ashraful Alam. A New Framework of Physics-Based Compact Model Predicts Reliability of Self-Heated Modern ICs: FinFET, NWFET, NSHFET Comparison. International Electron Devices Meeting conference (IEDM), 2017:13.6.1-13.6.4.

[12] Mengwei Si, Chunsheng Jiang, Wonil Chung, Yuchen Du, Muhammad Ashraf Alam, and Peide D. Ye. Steep-slope WSe2 Negative Capacitance Field-effect Transistor. Nano Letters, 18(6):3682–3687, 2018.

[13] Mengwei Si, Chun-Jung Su, Chunsheng Jiang, Nathan J. Conrad, Hong Zhou, Kerry D. Maize, Gang Qiu, Chien-Ting Wu, Ali Shakouri, Muhammad A. Alam, and Peide D. Ye. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nature Nanotechnology, 2018, 13(1):24-28.

[14] M. Si, C. Jiang, C.-J. Su, Y.-T. Tang, L. Yang, W. Chung, M. A. Alam, and P. D. Ye. Sub-60 mV/dec Ferroelectric HZO MoS2 Negative Capacitance Field-effect Transistor with Internal Metal Gate: the Role of Parasitic Capacitance. International Electron Devices Meeting Conference (IEDM), 2017:23.5.1-23.5.4.

[15] Xingqiang Liu, Renrong Liang, Guoyun Gao, Caofeng Pan, Chunsheng Jiang, et al. MoS2 Negative Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit. Advanced Materials, 2018, doi.org/10.1002/adma.201800932.

[16] 蒋春生,负电容场效应晶体管特性及其解析模型研究。清华大学出版社,2020年10月,ISBN 978-7-302-55663-3(专著).


六、获奖情况:

[1] 2013年7月,获西安电子科技大学优秀毕业生标兵和优秀毕业论文;

[2] 2016年4月,获清华大学微纳电子系学术新秀;

[3] 2018年7月,获清华大学优秀博士毕业生;

[4] 2018年7月,获清华大学优秀博士论文二等奖;

[5] 2018年6月,获北京市优秀毕业生;

[6] 2019年4月,获2018年中国电子学会优秀博士学位论文(全国共22篇)

[7] 2019年7月,获IEEE Nano 2019最佳会议论文提名奖 (全球共12篇)

[8] 2019年12月, 获2019年中物院电子工程研究所优秀员工(top 10%)。


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